• DocumentCode
    2081133
  • Title

    Process sensitivity analysis using design of experiments and full 2D TCAD simulations

  • Author

    Gaston, G.J.

  • Author_Institution
    GEC Plessey Semicond., Plymouth, UK
  • fYear
    1995
  • fDate
    34744
  • Abstract
    The use of Technology CAD (TCAD) and Design of Experiment (DOE) tools for process sensitivity analysis and optimisation is described. The use of novel DOE techniques and their suitability to assess process manufacturability is outlined. An example of how this methodology can be applied to a 0.5 μm CMOS process, using full 2D TCAD is discussed
  • Keywords
    CAD; CMOS integrated circuits; design of experiments; semiconductor process modelling; sensitivity analysis; 0.5 micron; 2D TCAD simulations; CMOS process; Technology CAD; design of experiments; optimisation; process manufacturability; process sensitivity analysis;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Advanced MOS and Bi-Polar Devices, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19950193
  • Filename
    473090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2081133