Title :
Laser cooling in semiconductors: is it possible?
Author :
Imangholi, B. ; Hasselbeck, M.P. ; Sheik-Bahae, M. ; Epstein, R.I. ; Kurtz, S.
Author_Institution :
Dept. of Phys. & Astron., New Mexico Univ., Albuquerque, NM
Abstract :
Achieving net laser cooling in semiconductors requires extremely low non-radiative recombination rates. We present photoluminescence data obtained with MOCVD GaAs/InGaP passivated heterostructures that show laser cooling of GaAs is feasible
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser cooling; nonradiative transitions; passivation; photoluminescence; GaAs-InGaP; GaAs/InGaP heterostructures; MOCVD; laser cooling; nonradiative recombination rates; passivated heterostructures; photoluminescence; semiconductors;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
