Title :
325W HVHBT Doherty Final and LDMOS Doherty Driver with 30dB Gain and 54% PAE Linearized to -55dBc for 2c11 6.5dB PAR
Author :
Page, Preston ; Steinbeiser, Craig ; Landon, Thomas ; Burgin, Gary ; Hajji, Rached ; Branson, Roger ; Krutko, Oleh ; Delaney, Joe ; Witkowski, Larry
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
A two stage high power amplifier consisting of a 325W High Voltage HBT (HVHBT) Doherty final and a 20W LDMOS Doherty driver has been developed for use in wireless basestation applications. The lineup achieved greater than 54% PAE at 75W (48.77dBm) average output power with 30dB gain while achieving -55dBc linearized ACPR at 5MHz offset using a 2C11 WCDMA input signal with 6.5dB PAR signal. The DPD friendly characteristics of the HVHBT Doherty final enable use of a non-linear Doherty driver while maintaining the same ease of correction for the overall lineup.
Keywords :
MOSFET; code division multiple access; driver circuits; heterojunction bipolar transistors; power amplifiers; LDMOS Doherty driver; WCDMA; gain 30 dB; high power amplifier; high voltage HBT Doherty final amplifier; power 20 W; power 325 W; power 75 W; wireless basestation; Linearity; Multiaccess communication; Peak to average power ratio; Power amplifiers; Power generation; Power measurement; Spread spectrum communication;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062433
