325W HVHBT Doherty Final and LDMOS Doherty Driver with 30dB Gain and 54% PAE Linearized to -55dBc for 2c11 6.5dB PAR

Author

Page, Preston ; Steinbeiser, Craig ; Landon, Thomas ; Burgin, Gary ; Hajji, Rached ; Branson, Roger ; Krutko, Oleh ; Delaney, Joe ; Witkowski, Larry

Author_Institution

TriQuint Semicond., Richardson, TX, USA

fYear

2011

fDate

16-19 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

A two stage high power amplifier consisting of a 325W High Voltage HBT (HVHBT) Doherty final and a 20W LDMOS Doherty driver has been developed for use in wireless basestation applications. The lineup achieved greater than 54% PAE at 75W (48.77dBm) average output power with 30dB gain while achieving -55dBc linearized ACPR at 5MHz offset using a 2C11 WCDMA input signal with 6.5dB PAR signal. The DPD friendly characteristics of the HVHBT Doherty final enable use of a non-linear Doherty driver while maintaining the same ease of correction for the overall lineup.

Keywords

MOSFET; code division multiple access; driver circuits; heterojunction bipolar transistors; power amplifiers; LDMOS Doherty driver; WCDMA; gain 30 dB; high power amplifier; high voltage HBT Doherty final amplifier; power 20 W; power 325 W; power 75 W; wireless basestation; Linearity; Multiaccess communication; Peak to average power ratio; Power amplifiers; Power generation; Power measurement; Spread spectrum communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE

Conference_Location

Waikoloa, HI

ISSN

1550-8781

Print_ISBN

978-1-61284-711-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2011.6062433

Filename

6062433