• DocumentCode
    2081448
  • Title

    Waveform Engineering beyond the Safe Operating Region: Fully Active Harmonic Load Pull Measurements under Pulsed Conditions

  • Author

    Casbon, M.A. ; Tasker, P.J. ; Benedikt, J.

  • Author_Institution
    Centre for High Freq. Eng. Sch. of Eng., Cardiff Univ., Cardiff, UK
  • fYear
    2011
  • fDate
    16-19 Oct. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    It is often desirable to measure device characteristics under non-continuous operation, perhaps to better simulate actual operating conditions, to reduce the thermal loading or to investigate RF operation going beyond the CW safe operating region. In this paper a measurement solution is presented that allows for the concept of experimental RF waveform engineering to be undertaken under such conditions. The system is demonstrated by using it to investigate the feasibility of operating GaAs based HEMT technology under pulsed conditions in high efficiency modes that required high RF voltage swings that extend beyond their rated CW safe operating region.
  • Keywords
    III-V semiconductors; gallium arsenide; high electron mobility transistors; semiconductor device measurement; HEMT technology; RF waveform engineering; fully active harmonic load pull measurements; safe operating region; thermal loading; Current measurement; Harmonic analysis; Power amplifiers; Power generation; Pulse measurements; Radio frequency; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
  • Conference_Location
    Waikoloa, HI
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-61284-711-5
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2011.6062435
  • Filename
    6062435