• DocumentCode
    2081454
  • Title

    GaAs Bipolar Broadband Oscillators

  • Author

    Topham, P.J. ; Dearn, A ; Parkinson, G

  • Author_Institution
    GEC-Marconi Materials Technology Limited, Caswell, Towcester, Northants, England
  • Volume
    1
  • fYear
    1991
  • fDate
    9-12 Sept. 1991
  • Firstpage
    178
  • Lastpage
    183
  • Abstract
    The GaAs heterojunction bipolar transistor (HBT) has been investigated for use in oscillators due to its combination of low flicker noise and high frequency performance. The HBT characteristics in oscillators have been assessed by constructing both varactor tuned oscillators (VTO) and, for the first time, YIG tuned oscillators (YTO). Tuning range, output power and phase noise are described for both types. The YIG tuned oscillator exhibits phase noise better than ¿110dBc/Hz at 100kHz off carrier which is the lowest phase noise reported to date for a tuneable HBT oscillator.
  • Keywords
    Circuit optimization; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Microwave oscillators; Parasitic capacitance; Phase noise; Silicon; Tuning; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1991. 21st European
  • Conference_Location
    Stuttgart, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1991.336430
  • Filename
    4136285
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2081454