Title :
Highly Stable 15 dBm Low Noise GaAs MESFET Source at 45 GHz using a GaAs PHEMT as a Frequency Doubler
Author :
Khanna, A.P.S. ; Creamer, Carl ; Topacio, Ed ; Camargo, Edmar
Abstract :
A highly stable GaAs MESFET dielectric resonator oscillator with a GaAs PHEMT frequency doubler, operating at 45 GHz, has been developed. The oscillator presents + 15 dBm minimum output power, ±0.01% temperature stability and ¿82 dBc/Hz phase noise at 10 Khz from the carrier. The design approach is discussed and practical test results are presented.
Keywords :
Dielectrics; Frequency; Gallium arsenide; MESFETs; Oscillators; PHEMTs; Phase noise; Power generation; Stability; Temperature;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336431
