DocumentCode :
2081626
Title :
A W-band SiGe 1.5V LNA for imaging applications
Author :
May, Jason W. ; Rebeiz, Gabriel M.
Author_Institution :
Univ. of California, San Diego, CA
fYear :
2008
fDate :
June 17 2008-April 17 2008
Firstpage :
241
Lastpage :
244
Abstract :
This paper presents a 4-stage SiGe W-band amplifier for imaging applications designed in a 200 GHz ft SiGe BiCMOS process (IBM 8HP). The amplifier exhibits a gain of 19 dB at 85-89 GHz, a 3-dB bandwidth of 17 GHz, a NF of 8-10 dB over the measurement band, and consumes only 25 mW of DC power. The amplifier is very small (0.1 mm2 without pads), making it ideal for 8 or 16-element imaging arrays on a single chip. To our knowledge, this is the first demonstration of a high-gain, high-bandwidth W-band amplifier using SiGe technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; image sensors; low noise amplifiers; millimetre wave amplifiers; BiCMOS; LNA; bandwidth 17 GHz; frequency 85 GHz to 89 GHz; imaging; power 25 mW; voltage 1.5 V; BiCMOS integrated circuits; Broadband amplifiers; Detectors; Gain; Germanium silicon alloys; Impedance; MIM capacitors; Noise figure; Schottky diodes; Silicon germanium; BiCMOS; IBM 8HP; LNA; SiGe; W-band;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
ISSN :
1529-2517
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
Type :
conf
DOI :
10.1109/RFIC.2008.4561427
Filename :
4561427
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2081626
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