A 6 Vpp, 52 dB, 30-dB Dynamic Range, 43 Gb/s InP DHBT Differential Limiting Amplifier

Author

Dupuy, J. -Y ; Konczykowska, A. ; Jorge, F. ; Riet, M. ; Berdaguer, P. ; Godin, J.

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

fYear

2011

fDate

16-19 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

We report the design, fabrication and measurement of a 43 Gb/s differential limiting amplifier integrating a transimpedance amplifier (TIA) as input stage and a distributed amplifier (Driver) as output stage, realised in a 1.5-μm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. With a differential gain higher than 52 dB, the TIA-Driver provides a constant 6 Vpp differential output amplitude for an input amplitude ranging from 12.7 mVpp to 405 mVpp, achieving more than 30 dB of electrical dynamic range, for a power consumption of 2.7 W. Designed to be used between a photodiode and an electro-optical modulator, this circuit is well suited for optical-to-electrical-to-optical (O-E-O) wavelength converters at up to 43 Gb/s.

Keywords

III-V semiconductors; differential amplifiers; electro-optical modulation; heterojunction bipolar transistors; indium compounds; optical wavelength conversion; photodiodes; DHBT differential limiting amplifier; InP; bit rate 43 Gbit/s; distributed amplifier; double heterojunction bipolar transistor; electro-optical modulator; optical-to-electrical-to-optical wavelength converters; photodiode; power 2.7 W; size 1.5 mum; transimpedance amplifier; voltage 12.7 mV; voltage 405 mV; voltage 6 V; Dynamic range; Gain; Indium phosphide; Jitter; Limiting; Modulation; Optical fiber amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE

Conference_Location

Waikoloa, HI

ISSN

1550-8781

Print_ISBN

978-1-61284-711-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2011.6062441

Filename

6062441