DocumentCode
2081672
Title
(Invited) The new CMC standard compact MOS model PSP: advantages for RF applications
Author
Scholten, A.J. ; Smit, G.D.J. ; De Vries, B.A. ; Tiemeijer, L.F. ; Croon, J.A. ; Klaassen, D.B.M. ; van Langevelde, R. ; Li, X. ; Wu, W. ; Gildenblat, G.
Author_Institution
NXP-TSMC Res. Center, Eindhoven
fYear
2008
fDate
June 17 2008-April 17 2008
Firstpage
247
Lastpage
250
Abstract
First the surface-potential-based compact MOS model, PSP, is introduced. After a discussion of the general advantages of this model, it is benchmarked against measurements from the 45 nm technology node. Finally, we zoom in on the modeling in PSP of two effects that are of special importance for RF applications: distortion and noise.
Keywords
MIS devices; radiofrequency integrated circuits; radiofrequency interference; CMC standard compact MOS model; PSP; RF applications; distortion effect; noise effect; surface-potential-based compact MOS model; Capacitance; Councils; Europe; Government; Intrusion detection; MOSFET circuits; Mathematical model; Radio frequency; Solid modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location
Atlanta, GA
ISSN
1529-2517
Print_ISBN
978-1-4244-1808-4
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2008.4561428
Filename
4561428
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