Title :
(Invited) The new CMC standard compact MOS model PSP: advantages for RF applications
Author :
Scholten, A.J. ; Smit, G.D.J. ; De Vries, B.A. ; Tiemeijer, L.F. ; Croon, J.A. ; Klaassen, D.B.M. ; van Langevelde, R. ; Li, X. ; Wu, W. ; Gildenblat, G.
Author_Institution :
NXP-TSMC Res. Center, Eindhoven
fDate :
June 17 2008-April 17 2008
Abstract :
First the surface-potential-based compact MOS model, PSP, is introduced. After a discussion of the general advantages of this model, it is benchmarked against measurements from the 45 nm technology node. Finally, we zoom in on the modeling in PSP of two effects that are of special importance for RF applications: distortion and noise.
Keywords :
MIS devices; radiofrequency integrated circuits; radiofrequency interference; CMC standard compact MOS model; PSP; RF applications; distortion effect; noise effect; surface-potential-based compact MOS model; Capacitance; Councils; Europe; Government; Intrusion detection; MOSFET circuits; Mathematical model; Radio frequency; Solid modeling; Threshold voltage;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561428
