Title :
0.15uM Y-Gate pHEMT Process Using Deep-UV Phase-Shift Lithography
Author :
Wang, Jerry G. ; Stanback, John ; Fujii, Kohei
Author_Institution :
Avago Technol. Inc., Fort Collins, CO, USA
Abstract :
An AlGaAs/InGaAs pHEMT process employing Deep-UV Phase-Shift lithography to create 0.15uM Y-shape gates has been developed and released to manufacturing. The gate formation process has high throughput and low cost compared to E-beam lithography and excellent process control has been achieved. Typical Fet characteristics are: peak fT=86Ghz, Vp=-1.0V, Gmmax=520mS/mm, Imax=575mA/mm, and BVdg=14 volts. A 9-section traveling wave amplifier (TWA) with 10dB gain up to 88 Ghz has been manufactured in this process.
Keywords :
III-V semiconductors; aluminium compounds; electron beam lithography; gallium arsenide; high electron mobility transistors; indium compounds; travelling wave amplifiers; ultraviolet lithography; 9-section traveling wave amplifier; AlGaAs-InGaAs; Y-gate pHEMT process; deep-UV phase-shift lithography; electron beam lithography; frequency 88 GHz; gain 10 dB; gate formation process; process control; size 0.15 mum; voltage 14 V; Gallium arsenide; Lithography; Logic gates; Metals; PHEMTs; Performance evaluation; Resists;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062444
