Title :
Experimental characterization and simulation of RF intermodulation linearity in a 90 nm RF CMOS technology
Author :
Wei, Xiaoyun ; Niu, Guofu ; Li, Ying ; Yang, Ming-Ta ; Taylor, Stewart S.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL
fDate :
June 17 2008-April 17 2008
Abstract :
This work examines the intermodulation linearity of 90 nm RF CMOS using IP3 measurement, BSIM4 based simulation, and first order theory. VGS, VDS, and device width dependences are examined. Guidelines to accurately identifying the sweet spot biasing current for larger devices used in RFIC design are provided.
Keywords :
CMOS integrated circuits; intermodulation distortion; radiofrequency integrated circuits; BSIM4 based simulation; IP3 measurement; RF CMOS technology; RF intermodulation linearity; first order theory; size 90 nm; CMOS technology; Circuit simulation; Computer simulation; Distortion measurement; Dynamic range; Intermodulation distortion; Linearity; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; BSIM4; LNA; Linearity; RF CMOS;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561429
