• DocumentCode
    2081711
  • Title

    Experimental characterization and simulation of RF intermodulation linearity in a 90 nm RF CMOS technology

  • Author

    Wei, Xiaoyun ; Niu, Guofu ; Li, Ying ; Yang, Ming-Ta ; Taylor, Stewart S.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL
  • fYear
    2008
  • fDate
    June 17 2008-April 17 2008
  • Firstpage
    251
  • Lastpage
    254
  • Abstract
    This work examines the intermodulation linearity of 90 nm RF CMOS using IP3 measurement, BSIM4 based simulation, and first order theory. VGS, VDS, and device width dependences are examined. Guidelines to accurately identifying the sweet spot biasing current for larger devices used in RFIC design are provided.
  • Keywords
    CMOS integrated circuits; intermodulation distortion; radiofrequency integrated circuits; BSIM4 based simulation; IP3 measurement; RF CMOS technology; RF intermodulation linearity; first order theory; size 90 nm; CMOS technology; Circuit simulation; Computer simulation; Distortion measurement; Dynamic range; Intermodulation distortion; Linearity; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; BSIM4; LNA; Linearity; RF CMOS;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4244-1808-4
  • Electronic_ISBN
    1529-2517
  • Type

    conf

  • DOI
    10.1109/RFIC.2008.4561429
  • Filename
    4561429
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2081711