Title :
Electromigration simulations for small scale structures
Author :
O´Sullivan, Connor ; Rohan, Michael ; Mathewson, Alan
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
Abstract :
This paper presents the results of the investigation of different via structures (the connections between different layers of metals) and different via configurations using the general purpose finite element simulator ANSYS. The simulations are used to help optimize the reliability of a 0.5 μm process
Keywords :
electromigration; finite element analysis; metallisation; semiconductor process modelling; 0.5 micron; ANSYS finite element simulator; connections; electromigration simulations; metal layers; optimization; reliability; small scale structures; via structures;
Conference_Titel :
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19950184
