DocumentCode
2081937
Title
Time-Domain Modeling of the Transient Response of a Back-To-Back Silicon Pin-Diode Passive Power-Limiter Circuit
Author
Dalle, C. ; Rolland, P.A. ; Friscourt, M.R.
Author_Institution
Centre Hyperfrequences et Semiconducteurs, U. A. 287, Universite des Sciences et Techniques de Lille-Flandres-Artois, 59 655, Villeneuve d´´Ascq Cedex, France
Volume
1
fYear
1991
fDate
9-12 Sept. 1991
Firstpage
289
Lastpage
294
Abstract
We have developed a numerical procedure which allows us to solve the integro-differential equation driving the electrical behavior of a lumped-element circuit while accounting for the semiconductor component by means of a numerical semiconductor modeling. This modeling has been used to describe the whole transient response of a back-to-back silicon PIN-diode passive power-limiter circuit. To our knowledge it is the first time this kind of simulation is applied to a two-diode circuit. It is here demonstrated that in the present case of a 2 ¿m-long PIN-diode the high input-power steady-state operation only relies on one diode, while the two diodes are working under low input-power conditions.
Keywords
Circuits; Impedance; Insertion loss; Integrodifferential equations; Semiconductor devices; Semiconductor diodes; Silicon; Time domain analysis; Transient response; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1991. 21st European
Conference_Location
Stuttgart, Germany
Type
conf
DOI
10.1109/EUMA.1991.336448
Filename
4136303
Link To Document