Title :
Development of InAlN/GaN HEMTs Power Devices in S-Band
Author :
Piotrowicz, S. ; Chartier, E. ; Jardel, O. ; Dufraisse, J. ; Callet, G. ; Jacquet, J.-C. ; Lancereau, D. ; Morvan, E. ; Aubry, R. ; Sarazin, N. ; Dua, C. ; Oualli, M. ; Poisson, M. A Di-Forte ; Delage, S.L.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
We report on AlInN/GaN HEMTs fabricated using 0.7μm gate length on SiC substrate by Low Pressure Metal Organic Vapor Phase Epitaxy. Static and pulsed DC characteristics show a maximum dc transconductance of 275mS/mm and drain current of 0.9A/mm. Small signal characterizations show Ft and Fmag of 15 and 40 GHz respectively. Load-pull power measurements were performed at S-Band. At 3.5 GHz, an output power of 13W (41.2dBm) corresponding to 6.6W/mm of power density with a PAE of 70% is reached in pulse mode on 2mm devices. 19.2mm power dies allow us to achieve an output power of 56W with 54% of PAE at 2 GHz. To our knowledge, this result represents the highest output power ever reported for AlInN-based HEMT technology.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; power HEMT; power measurement; power semiconductor devices; semiconductor device measurement; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; HEMT; InAlN-GaN; S-band; efficiency 54 percent; efficiency 70 percent; frequency 15 GHz; frequency 2 GHz; frequency 3.5 GHz; frequency 40 GHz; load-pull power measurements; low pressure metal organic vapor phase epitaxy; power 13 W; power 56 W; power devices; size 0.7 mum; size 19.2 mm; size 2 mm; Current measurement; Gain; Gallium nitride; HEMTs; Logic gates; MODFETs; Power generation;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062455
