Title :
A Robust AlGaN/GaN HEMT Technology for RF Switching Applications
Author :
Hodge, Michael D. ; Vetury, Ramakrishna ; Shealy, Jeffrey ; Adams, Ryan
Author_Institution :
Dept. of Electr. & Comput. Eng., UNC-Charlotte, Charlotte, NC, USA
Abstract :
The authors report results suggesting that GaN HEMTs developed for RF switching applications do not suffer from an inverse piezo effect related reliability failure mechanism. A critical voltage was not observed prior to breakdown voltage, suggesting a robust GaN HEMT technology well suited for RF switching applications.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistor switches; high electron mobility transistors; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; RF switching applications; breakdown voltage; critical voltage; high electron mobility transistors; inverse piezo effect; reliability failure mechanism; Degradation; Gallium nitride; HEMTs; Radio frequency; Reliability; Stress; Temperature measurement;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062456
