DocumentCode :
2082083
Title :
Automotive Applications of GaN Power Devices
Author :
Kachi, Tetsu ; Kanechika, Masakazu ; Uesugi, Tsutomu
Author_Institution :
Toyota Central R&D Labs., Inc., Nagakute, Japan
fYear :
2011
fDate :
16-19 Oct. 2011
Firstpage :
1
Lastpage :
3
Abstract :
Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV). The power electronics in the HV/EV system is reviewed. For future development of the HV/EV system, higher performances of the power devices than Si limit, for example, low on-resistance, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Developing GaN power devices are lateral structure and vertical structure. Recent progress of the GaN power devices are also reviewed.
Keywords :
III-V semiconductors; automotive electronics; gallium compounds; hybrid electric vehicles; power electronics; power semiconductor switches; wide band gap semiconductors; GaN; electric vehicle; hybrid vehicle; power electronics; power switching devices; Gallium nitride; Inverters; Logic gates; Performance evaluation; Silicon; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
ISSN :
1550-8781
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
Type :
conf
DOI :
10.1109/CSICS.2011.6062459
Filename :
6062459
Link To Document :
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