DocumentCode
2082089
Title
Radiation effects on advanced bipolar and MOS devices
Author
Sharp, R.E.
Author_Institution
Telerobotic Syst., AEA Technol., Harwell, UK
fYear
1995
fDate
34744
Firstpage
42552
Lastpage
42558
Abstract
This paper describes the effects of gamma radiation on modern bipolar and MOS semiconductors, as experienced in typical nuclear power industry applications. The environmental conditions under which components and equipment have to operate are reviewed and the influence of these on microelectronic devices is considered. Special emphasis is placed upon the recent generation of radiation tolerant processes
Keywords
MIS devices; gamma-ray effects; radiation hardening (electronics); semiconductor devices; MOS devices; bipolar devices; environmental conditions; gamma radiation; microelectronic devices; nuclear power industry; radiation tolerant processes; semiconductors;
fLanguage
English
Publisher
iet
Conference_Titel
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19950183
Filename
473094
Link To Document