Title :
(Invited) An Ultra-Low Insertion Loss T/R switch fully integrated with 802.11b/g/n transceiver in 90nm CMOS
Author :
Kidwai, A.A. ; Fu, C.T. ; Sadhwani, R. ; Chu Chi, D. ; Jensen, J.C. ; Taylor, S.
Author_Institution :
Intel Corp., Hillsboro, OR
fDate :
June 17 2008-April 17 2008
Abstract :
An Ultra Low Insertion loss T/R switch fully integrated with 802.11 b/g/n direct conversion transceiver front end in 90 nm CMOS. The receiver achieves 3.6 dB NF at 2.4 GHz. The T/R switch has been designed and tested and has 0.3 dB insertion loss in the transmit mode and adds 0.1 dB of NF in the receive mode while occupying 0.02 mm2 of the die area.
Keywords :
CMOS integrated circuits; UHF integrated circuits; switching circuits; transceivers; wireless LAN; 802.11 b; 802.11g; 802.11n; direct conversion transceiver; frequency 2.4 GHz; loss 0.3 dB; noise figure 3.6 dB; size 90 nm; ultra-low insertion loss T/R switch; Costs; Impedance; Insertion loss; MOS devices; Noise measurement; Propagation losses; Silicon; Switches; Switching circuits; Transceivers; IL; NF; RF Switch; RX; T/R Switch; TX;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561443
