The Power Electronics Market and the Status of GaN Based Power Devices

Author

Briere, Michael A.

Author_Institution

ACOO Enterprises LLC, Scottsdale, AZ, USA

fYear

2011

fDate

16-19 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

Focusing on the application range between 20 and 1200 V, a survey is presented of the power electronic marketplace including the principle power device structures and IC technologies as well as circuit topologies used in the major applications. The relation between power device performance and system level capabilities are discussed. Recent results obtained using the commercial GaN- on-Si based HEMT development platform at International Rectifier, known as GaNpowIR®, will be presented.

Keywords

III-V semiconductors; gallium compounds; power integrated circuits; wide band gap semiconductors; GaN; GaN based power devices; GaNpowIR; HEMT development platform; IC technologies; International Rectifier; circuit topologies; power device performance; power electronic marketplace; power electronics market; principle power device structures; system level capabilities; voltage 20 V to 1200 V; Gallium nitride; Performance evaluation; Power electronics; Rectifiers; Silicon; Switches; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE

Conference_Location

Waikoloa, HI

ISSN

1550-8781

Print_ISBN

978-1-61284-711-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2011.6062462

Filename

6062462