Title :
An On-Board 50 GHz Band Low-Noise Amplifier for Millimeter Wave Personal Satellite Communications
Author :
Shigaki, Masafumi ; Sugawara, Satoru ; Yamamoto, Tetsuo ; Kawasaki, Yoshihiro ; Ohashi, Yoji ; Iwatsuki, Hajime ; Kato, Tadayoshi
Author_Institution :
Space Communications Research Corporation, 5F, Hayakawa Tonakai Bldg. 2-12-5, Iwamoto-cho, Chiyoda-ku, Tokyo 101, Japan
Abstract :
An onboard 50 GHz band low-noise amplifier for millimeter wave personal satellite communications is developed. A 100-¿ m-wide and 0.25-¿ m-long gate HEMT is developed. An accurate S parameter of a device with bonding wire is successfully measured up to 40 GHz using MMIC technology. The characteristics of this amplifier are a 20 dB gain, 4.2 dB noise figure, and 20 dB input return loss over a 50.4 GHz to 51.4 GHz communication bandwidth at room temperature. At +60°C and ¿40°C, the maximum noise figures are 4.4 dB and 2.8 dB, respectively. There are no problems for the temperature cycle and modal survey test.
Keywords :
Bonding; HEMTs; Low-noise amplifiers; Millimeter wave communication; Millimeter wave measurements; Millimeter wave technology; Noise figure; Satellite communication; Scattering parameters; Temperature;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336457
