Title :
SiGeC and InP HBT Compact Modeling for mm-Wave and THz Applications
Author :
Schroter, M. ; Pawlak, A. ; Sakalas, P. ; Krause, J. ; Nardmann, T.
Author_Institution :
Dept. of Electron Devices & Integrated Circuits, Tech. Univ. Dresden, Dresden, Germany
Abstract :
An overview on compact transistor modeling for mm-wave HBT technologies is provided. Using HICUM as a vehicle, a comparison to experimental DC, AC and large-signal data is performed. Selected examples are shown for advanced SiGeC and InP HBTs with operating frequencies (fT, fmax) of (300, 500) GHz and (350, 450) GHz, respectively. Good agreement between model and measurements is obtained for all characteristics.
Keywords :
III-V semiconductors; germanium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device models; silicon compounds; submillimetre wave transistors; HBT compact modeling; HICUM; InP; SiGeC; THz applications; compact transistor modeling; frequency 300 GHz; frequency 350 GHz; frequency 450 GHz; frequency 500 GHz; large-signal data; mm-wave HBT technologies; Computational modeling; Geometry; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit modeling; Parameter extraction;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062466
