Title :
Coplanar Monolithic Silicon Impatt Transmitter
Author :
Buechler, J. ; Strohm, K.M. ; Luy, J.F. ; Goeller, T. ; Sattler, S. ; Russer, P.
Author_Institution :
Daimler-Benz Research Center, Wilhelm Runge Str. 11, D-7900 Ulm
Abstract :
A coplanar W-band transmitter incorporating a monolithically integrated IMPATT diode in a self radiating slot line resonator has been designed and fabricated with molecular beam epitaxy (MBE) on a high resistivity silicon substrate. A pulsed radiated output power of 7 mW at 109 GHz was measured.
Keywords :
Fabrication; Heat sinks; Resistance heating; Schottky diodes; Semiconductor diodes; Silicon; Substrates; Thermal conductivity; Thermal resistance; Transmitters;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336458
