Title :
V-Band Monolithic GaAs Impatt-Oscillator
Author :
Bogner, W ; Freyer, J.
Abstract :
Design and fabrication of a monolithically integrated V-band Impatt-oscillator on semiinsulating GaAs substrate is described. The impedance matching between the active device and the rectangular microstrip resonator has been investigated theoretically by the use of a transmission line model. As active device, a single-drift flat-profile Impatt-diode grown by GaAs MBE, is monolithically integrated yielding a maximum cw output power of 30 mW at an oscillation frequency of 67.9 GHz. The maximum conversion efficiency of the oscillator is 3.0 %.
Keywords :
Etching; Fabrication; Frequency; Gallium arsenide; Integrated circuit technology; MMICs; Microstrip resonators; Oscillators; Resists; Semiconductor diodes;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336459
