Title :
A Planar Schottky-Diode Device for Millimetre-Wave Balanced Mixer Applications
Author :
Wells, J.A. ; Cronin, N.J.
Author_Institution :
School of Physics, University of Bath, Claverton Down, Bath, Avon, BA2 7AY.
Abstract :
A GaAs Schottky diode integrated circuit has been developed for use as the mixing element in a wideband balanced mixer. The chip consists of two monolithic diodes with low parasitics and their associated antenna coupling structure. The I-V characteristics of the diodes are equivalent to the best whiskered devices. When used in a W-band crossbar balanced mixer, a single sideband conversion loss of 6.8dB and with an associated 860K DSB noise temperatures has been achieved at room temperature. The mixer proves to be very rugged, with wide signal and IF bandwidths.
Keywords :
Anodes; Bonding; Contact resistance; Etching; Frequency; Mixers; Parasitic capacitance; Passivation; Schottky diodes; Temperature;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336332
