Title :
Insulated-Gate Integrated III-Nitride RF Switches
Author :
Gaska, R. ; Yang, J. ; Billingsley, D. ; Khan, B. ; Simin, G. ; Wong, H.Y. ; Braga, N. ; Hu, X. ; Deng, J. ; Shur, M. ; Mickevicius, R.
Author_Institution :
SET, Inc., Columbia, SC, USA
Abstract :
Monolithically integrated microwave switches based on insulated gate transistors benefit from extremely small leakage currents crucially important for large-periphery devices. Composite fast/slow gate design and nonlinearity compensation technique allow the insulated gate switches to achieving superior performance compared to existing RF switch types.
Keywords :
MMIC; MOSFET; high electron mobility transistors; leakage currents; microwave switches; insulated gate RF switches; insulated gate transistors; leakage currents; monolithically integrated microwave switches; nonlinearity compensation technique; Gallium nitride; HEMTs; Insertion loss; Logic gates; MODFETs; MOSHFETs; Radio frequency;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062470
