DocumentCode
2082594
Title
Parasitic current mechanisms and current stress induced degradation effects in mesa-isolated, SiGe heterojunction bipolar transistors
Author
Goh, I.S. ; Hall, S.
Author_Institution
Dept. of Electr. Eng. & Electron., Liverpool Univ., UK
fYear
1995
fDate
34744
Firstpage
42491
Lastpage
42496
Abstract
We present a study of parasitic current mechanisms apparent in the characteristics of mesa isolated SiGe HBTs and the effects upon these characteristics of degradation initiated by constant reverse current stress of the emitter-base (EB) and base-collector (BC) junctions
Keywords
Ge-Si alloys; heterojunction bipolar transistors; isolation technology; semiconductor materials; SiGe; base-collector junction; constant reverse current stress; degradation; emitter-base junction; mesa-isolated SiGe heterojunction bipolar transistors; parasitic current;
fLanguage
English
Publisher
iet
Conference_Titel
Advanced MOS and Bi-Polar Devices, IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19950181
Filename
473096
Link To Document