Near-field phase-change recording using a GaN laser diode

Author

Kishima, K. ; Tchimura, I. ; Yamamoto, K. ; Osato, K. ; Kuroda, Y. ; Iida, A. ; Saito, K.

Author_Institution

Dev. Center, Sony Corp. Home Network Co., Tokyo, Japan

fYear

2000

fDate

14-17 May 2000

Firstpage

33

Lastpage

35

Abstract

We demonstrated near-field recording with the combination of a GaN laser diode and a 1.5 NA objective lens. The realized linear bit density was less than 90 nm (corresponding to the areal recording density over 40 Gbit/in/sup 2/) regardless of using a small 1.0 mm-diameter super-hemispherical solid immersion lens (SIL). Further improvement of a near-field phase-change optical disk will enable a linear bit density of 80 nm or less. In this talk we shall also report the fabrication process of the plateau, and of the electrode on the SIL.

Keywords

electrodes; lenses; optical disc storage; optical fabrication; semiconductor lasers; solid-state phase transformations; 1 mm; GaN; GaN laser diode; areal recording density; electrode; fabrication process; linear bit density; near-field phase-change optical disk; near-field phase-change recording; near-field recording; objective lens; super-hemispherical solid immersion lens; Air gaps; Diode lasers; Electrodes; Gallium nitride; Laser beams; Lenses; Optical recording; Optical refraction; Optical variables control; Servomechanisms;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Data Storage, 2000. Conference Digest

Conference_Location

Whisler, BC, Canada

Print_ISBN

0-7803-5950-X

Type

conf

DOI

10.1109/ODS.2000.847972

Filename

847972