Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs

Author

Komiak, James J. ; Lender, Robert J. ; Chu, Kanin ; Chao, Pane Chane

Author_Institution

BAE Syst. Electron. Solutions, Nashua, NH, USA

fYear

2011

fDate

16-19 Oct. 2011

Firstpage

1

Lastpage

4

Abstract

Design and performance of power amplifiers that have established benchmarks for 1 to 6 GHz power are reported. The 6 mm periphery balanced amplifier achieved a P3dB of 14.5 Watts max, 11.1 Watts average, 8.2 Watts min with 46.1 % max, 31.8 % average, 18.1 % min PAE and 9.6 dB max, 8.5 dB average, 7.5 dB min power gain from 1 to 6 GHz. The 8 mm periphery balanced amplifier achieved a P5dB of 26.7 Watts max, 20.6 Watts average, 13.9 Watts min with 44.4 % max, 30.8 % average, 17.8 % min PAE and 10.6 dB max, 10 dB average, 8.4 dB min power gain from 1 to 7 GHz. This output power, bandwidth, and efficiency is superior to the best previously reported results for both GaN HEMT and PHEMT power amplifiers [1, 2, 3].

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; distributed amplifiers; field effect MMIC; gallium compounds; wide band gap semiconductors; GaN; HEMT power amplifier MMIC; distributed amplifiers; frequency 1 GHz to 6 GHz; periphery balanced amplifier; power 8.2 W to 26.7 W; size 6 mm; size 8 mm; Bandwidth; Gain; Gallium nitride; HEMTs; MMICs; Microwave amplifiers; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE

Conference_Location

Waikoloa, HI

ISSN

1550-8781

Print_ISBN

978-1-61284-711-5

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2011.6062482

Filename

6062482