DocumentCode :
2082912
Title :
An X-Band Low Phase Noise AlGaN-GaN-HEMT MMIC Push-Push Oscillator
Author :
Zirath, Herbert ; Szhau, Lai ; Kuylenstierna, Dan ; Felbinger, Jonathan ; Andersson, Kristoffer ; Rorsman, Niklas
Author_Institution :
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
fYear :
2011
fDate :
16-19 Oct. 2011
Firstpage :
1
Lastpage :
4
Abstract :
An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and characterized. The oscillator is based on two common gate Colpitts oscillators. A minimum phase noise of -101 dBc at 100 kHz offset is achieved. The MMIC was fabricated in an ´in-house process´ at Chalmers University of Technology.
Keywords :
III-V semiconductors; MMIC oscillators; aluminium compounds; gallium compounds; high electron mobility transistors; microwave transistors; phase noise; wide band gap semiconductors; AlGaN-GaN; X-band low phase noise HEMT MMIC push-push oscillator; common gate Colpitts oscillators; in-house process; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MMICs; Phase noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
ISSN :
1550-8781
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
Type :
conf
DOI :
10.1109/CSICS.2011.6062492
Filename :
6062492
Link To Document :
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