Title :
Crystallization behavior of phase change materials: comparison between nucleation- and growth-dominated crystallization
Author :
Zhou, G.F. ; Borg, H.J. ; Rijpers, J.C.N. ; Lankhorst, M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
A comparative study of the crystallization behavior of nucleation- and growth-determined materials is presented. The influence of phase change layer thickness, additions and amorphous mark size on the crystallization rate is addressed. The long nucleation time of doped SbTe-type materials allows one to measure the nucleation probability separately, which may provide important information for initialization of optical storage disks.
Keywords :
antimony alloys; crystallisation; nucleation; optical disc storage; optical materials; probability; solid-state phase transformations; terbium alloys; amorphous mark size; crystallization behavior; crystallization rate; doped SbTe-type materials; growth-dominated crystallization; long nucleation time; nucleation probability; nucleation-dominated crystallization; optical storage disk initialisation; phase change layer thickness; phase change materials; Amorphous materials; Crystalline materials; Crystallization; Disk recording; Nitrogen; Nuclear measurements; Phase change materials; Power lasers; Pulse measurements; Time measurement;
Conference_Titel :
Optical Data Storage, 2000. Conference Digest
Conference_Location :
Whisler, BC, Canada
Print_ISBN :
0-7803-5950-X
DOI :
10.1109/ODS.2000.847985
