DocumentCode
2082952
Title
(Invited) ESD-RFIC Co-design methodology
Author
Guan, Xiaokang ; Xin Wang ; Lin, Lin ; Chen, Guang ; Wang, Xin ; Liu, Hainan ; Zhou, Yumei ; Chen, Hongyi ; Yang, Lee ; Zhao, Bin
Author_Institution
Dept. of EE, California Univ., Riverside, CA
fYear
2008
fDate
June 17 2008-April 17 2008
Firstpage
467
Lastpage
470
Abstract
RF ESD protection circuitry design emerges as a big challenge to RF IC design, where the main problem is associated with performance degradation of RF IC due to ESD-induced parasitics. It has been difficult to incorporate the ESD impacts into RF IC design due to lack of proper co-design approach and ESD device models. This paper presents a new ESD-RFIC co-design methodology, including RF ESD design optimization and characterization, as well as RF I/O re-matching techniques, developed to enable wholechip design optimization of ESD-protected RF IC circuits, which is verified by practical designs in 0.18 mum RFCMOS.
Keywords
CMOS integrated circuits; electrostatic discharge; integrated circuit design; radiofrequency integrated circuits; ESD-RFIC codesign methodology; RF I/O re-matching techniques; RFCMOS; size 0.18 mum; Circuit synthesis; Design optimization; Electrostatic discharge; Impedance matching; Integrated circuit modeling; Integrated circuit noise; Noise figure; Protection; Radio frequency; Radiofrequency integrated circuits; Co-Design; ESD; RFIC; Re-matching;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location
Atlanta, GA
ISSN
1529-2517
Print_ISBN
978-1-4244-1808-4
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2008.4561478
Filename
4561478
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