Title :
Fully Integrated 300 GHz Receiver S-MMICs in 50 nm Metamorphic HEMT Technology
Author :
Tessmann, A. ; Massler, H. ; Lewark, U. ; Wagner, S. ; Kallfass, I. ; Leuther, A.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany
Abstract :
Two fully integrated H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) heterodyne receivers have been successfully developed, based on a 50 nm metamorphic high electron mobility transistor (mHEMT) technology. A fabricated fundamental down-conversion receiver achieved a conversion gain of more than 11 dB in the frequency range from 270 to 310 GHz with an LO power of only 12 dBm. Furthermore, a subharmonic receiver S-MMIC was developed, consisting of an active frequency multiplier by three, a two stage driver amplifier, a single-ended resistive mixer, and a four-stage low-noise amplifier, demonstrating a conversion gain of more than 12 dB from 290 to 320 GHz with a subharmonic LO-power of 8 dBm. Grounded coplanar waveguide (GCPW) topology in combination with cascode transistors resulted in a very compact die size of less than 1.25 mm2.
Keywords :
HEMT integrated circuits; coplanar waveguides; field effect MIMIC; field effect MMIC; high electron mobility transistors; millimetre wave receivers; submillimetre wave integrated circuits; submillimetre wave receivers; GCPW topology; H-band; active frequency multiplier; cascode transistors; four-stage low-noise amplifier; frequency 220 GHz to 325 GHz; frequency 300 GHz; fully integrated receiver S-MMIC; fundamental down-conversion receiver; grounded coplanar waveguide; heterodyne receivers; metamorphic HEMT technology; metamorphic high electron mobility transistor; single-ended resistive mixer; submillimeter-wave monolithic integrated circuit; two stage driver amplifier; Frequency measurement; Gain; HEMTs; Logic gates; Mixers; Receivers;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-61284-711-5
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2011.6062496