DocumentCode :
2083093
Title :
III–V plasmonic solar cells: Targeting absorption enhancements close to the GaAs band edge
Author :
Hylton, N.P. ; Giannini, V. ; Vercruysse, D. ; Van Dorpe, P. ; Lee, K.-H. ; Li, X. ; Ekins-Daukes, N.J. ; Maier, S.A.
Author_Institution :
Phys. Dept., Imperial Coll. London, London, UK
fYear :
2011
fDate :
22-26 May 2011
Firstpage :
1
Lastpage :
1
Abstract :
Research into photovoltaics has attracted a great deal of attention in recent years since it represents a realistic solution to the so-called ´energy crisis´. To date however, solar cells have suffered from relatively high cost efficiency ($/Wp), limiting their commercial uptake. Recent research has therefore focused on the need to improve solar cell efficiencies to make photovoltaics a viable alternative to fossil fuels. One area of investigation is in the application of plasmonic nanoparticles in order to enhance the absorption of light in solar cells. Such an enhancement of the photoabsorption may allow the fabrication of structures in which the optical absorption depth is significantly larger than the thickness of the absorbing material, reducing the amount of material required and hence the cost of production.
Keywords :
III-V semiconductors; gallium arsenide; nanoparticles; plasmonics; solar cells; GaAs; energy crisis; fossil fuels; high cost efficiency; optical absorption depth; photoabsorption; plasmonic nanoparticles; plasmonic solar cells; targeting absorption enhancements; Absorption;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
ISSN :
Pending
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
Type :
conf
DOI :
10.1109/CLEOE.2011.5943615
Filename :
5943615
Link To Document :
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