Title :
A 90-nm CMOS LNA for MB-OFDM UWB in QFN package
Author :
Wong, King Wah ; Arasu, M. Annamalai ; Chan, Wei Khuen
Author_Institution :
A*STAR, Inst. of Microelectron., Singapore
fDate :
June 17 2008-April 17 2008
Abstract :
In this work, the design of a single ended low-noise amplifier (LNA) dedicated for multi-band orthogonal frequency-division multiplexing (MB-OFDM) Band Group-1 ultra-wideband (UWB) band is described. It achieves a flat gain from 2 to 5 GHz of 17 dB while drawing a current of 15.9 mA from a 1.2 V supply. The circuit has been implemented in 90 -nm CMOS technology and features a minimum noise figure (NF) of 2.5 dB over the frequency range as well as an input referred third-order intermodulation (IIP3) of -8 dBm.
Keywords :
CMOS integrated circuits; OFDM modulation; intermodulation; low noise amplifiers; ultra wideband communication; CMOS LNA; MB-OFDM UWB; QFN package; current 15.9 mA; frequency 2 GHz to 5 GHz; gain 17 dB; input referred third-order intermodulation; multiband orthogonal frequency-division multiplexing; noise figure 2.5 dB; single ended low-noise amplifier; ultra-wideband band; voltage 1.2 V; Bandwidth; CMOS technology; Filters; Impedance matching; Inductance; Network topology; Noise measurement; Packaging; Performance gain; Wideband; 90nm CMOS; Front End; LNA; UWB; low noise;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561485
