• DocumentCode
    2083172
  • Title

    Threeport Noise Characterization

  • Author

    Sporkmann, Th ; Wolff, I.

  • Author_Institution
    ArguMens Mikrowellenelektronik GmbH,Bismarckstr. 67, D-4100 Duisburg, Germany
  • Volume
    1
  • fYear
    1991
  • fDate
    9-12 Sept. 1991
  • Firstpage
    579
  • Lastpage
    584
  • Abstract
    The application of twoport noise and S-parameter measurements to the 3-port characterization is presented in this paper. Measurements of three two-, and oneports are the fundament of the procedure. From there, the 3-port S-parameters and a 3-port noise characterization based on the correlation matrix concept will be derived. Due to the general approach, arbitrary noisy loads may be used. The practical relevance of this theory is shown by applying the procedure to dual-gate FETs.
  • Keywords
    FETs; Frequency dependence; Frequency measurement; Impedance measurement; Microwave measurements; Noise figure; Noise measurement; Probes; Rotation measurement; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1991. 21st European
  • Conference_Location
    Stuttgart, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1991.336364
  • Filename
    4136348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2083172