Threeport Noise Characterization

The application of twoport noise and S-parameter measurements to the 3-port characterization is presented in this paper. Measurements of three two-, and oneports are the fundament of the procedure. From there, the 3-port S-parameters and a 3-port noise characterization based on the correlation matrix concept will be derived. Due to the general approach, arbitrary noisy loads may be used. The practical relevance of this theory is shown by applying the procedure to dual-gate FETs.