Title :
A 2.5-dB NF 3.1–10.6-GHz CMOS UWB LNA with small group-delay-variation
Author :
Lee, Jen-How ; Chen, Chi-Chen ; Yang, Hong-Yu ; Lin, Yo-Sheng
Author_Institution :
Dept. of Electr. Eng., Nat. Chi Nan Univ., Puli
fDate :
June 17 2008-April 17 2008
Abstract :
A 3.1-10.6-GHz ultra-wideband low-noise amplifier (UWB LNA) with excellent phase linearity property (group-delay-variation is only plusmn16.7 ps across the whole band) using standard 0.13 mum CMOS technology is reported. To achieve high and flat gain and small group-delay-variation at the same time, the inductive peaking technique is adopted in the output stage for bandwidth enhancement. The UWB LNA dissipates 10.68 mW power and achieves input return loss (S11) of -17.5 ~ -33.6 dB, output return loss (S22) of -14.4 ~ -16.3 dB, flat forward gain (S21) of 7.92 plusmn 0.23 dB, and reverse isolation (S12) of -25.8 ~ -41.9 dB over the 3.1-10.6 GHz band of interest. State-of-the-art noise figure (NF) of 2.5 dB is achieved at 10.5 GHz. The measured 1-dB compression point (P1dB) and input third-order inter-modulation point (IIP3) were -14 dBm and -4 dBm, respectively, at 6 GHz.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; ultra wideband technology; CMOS UWB LNA; bandwidth enhancement; frequency 3.1 GHz to 10.6 GHz; group-delay-variation; inductive peaking technique; input third-order inter-modulation point; noise figure 2.5 dB; power 10.68 mW; size 0.13 mum; small group-delay-variation; ultra-wideband low-noise amplifier; Bandwidth; CMOS process; CMOS technology; Frequency; Linearity; Low-noise amplifiers; Noise figure; Noise measurement; Radiofrequency integrated circuits; System-on-a-chip; CMOS; UWB; group delay; linearity; low power; low-noise amplifier;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561486