DocumentCode :
2083192
Title :
Results of Low Dose Rate Testing of Legacy Intersil Products
Author :
van Vonno, N.W. ; Pearce, L.G. ; Gill, J.S. ; Thomson, E.T. ; Chesley, P.J.
Author_Institution :
Specialty Products, Intersil Corp., Palm Bay, FL, USA
fYear :
2011
fDate :
25-29 July 2011
Firstpage :
1
Lastpage :
8
Abstract :
We report the results of low and high dose rate 60Co testing of a total of eight Intersil parts, including dielectrically isolated and junction isolated types. The MIL-STD-883 procedure for ELDRS sensitivity determination was used.
Keywords :
BiCMOS analogue integrated circuits; CMOS integrated circuits; MOSFET circuits; digital-analogue conversion; integrated circuit testing; ion beam effects; low-power electronics; multiplexing equipment; operational amplifiers; pulse width modulation; space vehicle electronics; ELDRS sensitivity; MIL-STD-883 procedure; dielectrically isolated legacy Intersil; junction isolated legacy Intersil; low dose rate testing; CMOS integrated circuits; Operational amplifiers; Pulse width modulation; Radiation effects; Sensitivity; Testing; Web sites;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2011 IEEE
Conference_Location :
Las Vegas, NV
ISSN :
2154-0519
Print_ISBN :
978-1-4577-1281-4
Type :
conf
DOI :
10.1109/REDW.2010.6062507
Filename :
6062507
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2083192
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