Title :
Microwave Noise Behaviour of Double Barrier Resonant Tunnelling Diodes
Author :
Heyker, H.C. ; Kwaspen, J.J.M. ; van de Roer, Th G
Abstract :
A method to measure the noise properties of double barrier resonant tunnelling (DBRT) diodes is described. The noise figure and noise measure of (nonoscillating) DBRT devices were measured over the full positive and negative bias voltage range, in the 1-1.6 GHz frequency band. Results show a clear bias dependence and almost frequency independence. The lowest noise measure observed on a 16 ¿m mesa DBRT diode biased in its active regions was 3, indicating that DBRT diodes are low noise devices.
Keywords :
Acoustical engineering; Circuit noise; Diodes; Frequency; Gallium arsenide; Microwave devices; Noise figure; Noise measurement; Resonant tunneling devices; Semiconductor device measurement;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336365
