• DocumentCode
    2083231
  • Title

    A 27dBm, SiGe-BiCMOS transmitter with 62% PAE and operation class control for large-bandwidth polar modulation and pulse-width modulated signals

  • Author

    Sanduleanu, Mihai A T ; Aditham, Ram P.

  • Author_Institution
    Philips Res. Eindhoven, Eindhoven
  • fYear
    2008
  • fDate
    June 17 2008-April 17 2008
  • Firstpage
    511
  • Lastpage
    514
  • Abstract
    This paper presents a SiGe BiCMOS transmitter for large bandwidth Polar Modulation and PWM signals. For flexibility, the transmitter presented in the paper has an externally controllable class of operation. Fabricated in a SiGe BiCMOS process (QUBIC4G), the measured saturated output power of the transmitter is 27 dBm and the measured PAE is 62%. It features an IMD3 of -30 dBc up to 25 dBm peak envelope power and fulfills the spectral mask for WLAN 802.11.a signals.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; pulse width modulation; radio transmitters; wireless LAN; BiCMOS transmitter; operation class control; polar modulation; pulse-width modulation; spectral mask; wireless LAN; Bandwidth; BiCMOS integrated circuits; Germanium silicon alloys; Power generation; Power measurement; Pulse modulation; Pulse width modulation; Silicon germanium; Space vector pulse width modulation; Transmitters; Multimode PA; Polar modulators; Power amplifiers; Pulse-Width Modulation (PWM); SiGe;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1529-2517
  • Print_ISBN
    978-1-4244-1808-4
  • Electronic_ISBN
    1529-2517
  • Type

    conf

  • DOI
    10.1109/RFIC.2008.4561488
  • Filename
    4561488