Title :
A 27dBm, SiGe-BiCMOS transmitter with 62% PAE and operation class control for large-bandwidth polar modulation and pulse-width modulated signals
Author :
Sanduleanu, Mihai A T ; Aditham, Ram P.
Author_Institution :
Philips Res. Eindhoven, Eindhoven
fDate :
June 17 2008-April 17 2008
Abstract :
This paper presents a SiGe BiCMOS transmitter for large bandwidth Polar Modulation and PWM signals. For flexibility, the transmitter presented in the paper has an externally controllable class of operation. Fabricated in a SiGe BiCMOS process (QUBIC4G), the measured saturated output power of the transmitter is 27 dBm and the measured PAE is 62%. It features an IMD3 of -30 dBc up to 25 dBm peak envelope power and fulfills the spectral mask for WLAN 802.11.a signals.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; pulse width modulation; radio transmitters; wireless LAN; BiCMOS transmitter; operation class control; polar modulation; pulse-width modulation; spectral mask; wireless LAN; Bandwidth; BiCMOS integrated circuits; Germanium silicon alloys; Power generation; Power measurement; Pulse modulation; Pulse width modulation; Silicon germanium; Space vector pulse width modulation; Transmitters; Multimode PA; Polar modulators; Power amplifiers; Pulse-Width Modulation (PWM); SiGe;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561488