• DocumentCode
    2083307
  • Title

    Designing and Modeling Multi-Channel HEMT Gate Mixer

  • Author

    Allam, R. ; Coupez, T. ; Kolanowski, C. ; Théron, D. ; Crosnier, Y.

  • Author_Institution
    Centre Hyperfréquences et Semiconducteurs, Université des Sciences et Techniques de Lille, 59655 Villeneuve d´´Ascq, France.
  • Volume
    1
  • fYear
    1991
  • fDate
    9-12 Sept. 1991
  • Firstpage
    603
  • Lastpage
    608
  • Abstract
    The study of a multichannel HEMT mixer Is presented. We discuss the specific advantages offered by multi-channel AlGaAs/GaAs HEMT for millimeter wave mixer realization. In particular, tailoring of adequate transconductance profile is used to optimize mixer performances. We study also the effect of HEMT non linearities (gate to source capacitance and drain current) on mixer characteristics conversion gain and third order Intermodulation point.
  • Keywords
    Capacitance; Circuit simulation; Doping; Electron traps; Gallium arsenide; HEMTs; Millimeter wave transistors; Mixers; Power harmonic filters; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1991. 21st European
  • Conference_Location
    Stuttgart, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1991.336368
  • Filename
    4136352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2083307