Title :
Designing and Modeling Multi-Channel HEMT Gate Mixer
Author :
Allam, R. ; Coupez, T. ; Kolanowski, C. ; Théron, D. ; Crosnier, Y.
Author_Institution :
Centre Hyperfréquences et Semiconducteurs, Université des Sciences et Techniques de Lille, 59655 Villeneuve d´´Ascq, France.
Abstract :
The study of a multichannel HEMT mixer Is presented. We discuss the specific advantages offered by multi-channel AlGaAs/GaAs HEMT for millimeter wave mixer realization. In particular, tailoring of adequate transconductance profile is used to optimize mixer performances. We study also the effect of HEMT non linearities (gate to source capacitance and drain current) on mixer characteristics conversion gain and third order Intermodulation point.
Keywords :
Capacitance; Circuit simulation; Doping; Electron traps; Gallium arsenide; HEMTs; Millimeter wave transistors; Mixers; Power harmonic filters; Transconductance;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336368
