Nonlinear Distributed Modelling of Multifinger FETs/HEMTs in Terms of Layout Geometry and Process Data

Multifinger FETs/HEMTs are simulated directly in terms of layout geometry. The approach developed for this uses a harmonic balance solution of the device multiple coupled nonlinear equations with input parameters set up from a combination of field theory-based look-up table data and per unit length process-related channel data. This novel approach gives maximum flexibility for microwave and mm-wave IC design. It has been verified by GaAs FET and HEMT simulation examples and comparison data measured at Plessey Caswell.