DocumentCode :
2083348
Title :
Effect of partial crystallization on formation of amorphous marks
Author :
Nelson, K. ; Lopez, O. ; Ruane, M.
Author_Institution :
Photrek, USA
fYear :
2000
fDate :
14-17 May 2000
Firstpage :
123
Lastpage :
125
Abstract :
A difference in initial state of a phase-change disk causes a difference in the final-state reflectivity of an amorphous mark under identical mark writing conditions. Static testing of a first-surface disk demonstrates that a 8% difference in reflectivity exists between the amorphous marks formed in a finally-crystallized, high reflectivity state and partially crystallized, low reflectivity state. This difference in final state reflectivity is a source of noise for rewritable phase-change optical disks.
Keywords :
optical disc storage; optical noise; reflectivity; solid-state phase transformations; amorphous mark formation; final-state reflectivity; finally-crystallized high reflectivity state; first-surface disk; identical mark writing conditions; initial state; low reflectivity state; partial crystallization; phase-change disk; reflectivity; rewritable phase-change optical disk noise source; static testing; Amorphous materials; Crystallization; Laser beams; Optical noise; Optical sensors; Optical surface waves; Petroleum; Reflectivity; Testing; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Data Storage, 2000. Conference Digest
Conference_Location :
Whisler, BC, Canada
Print_ISBN :
0-7803-5950-X
Type :
conf
DOI :
10.1109/ODS.2000.848001
Filename :
848001
Link To Document :
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