DocumentCode
2083348
Title
Effect of partial crystallization on formation of amorphous marks
Author
Nelson, K. ; Lopez, O. ; Ruane, M.
Author_Institution
Photrek, USA
fYear
2000
fDate
14-17 May 2000
Firstpage
123
Lastpage
125
Abstract
A difference in initial state of a phase-change disk causes a difference in the final-state reflectivity of an amorphous mark under identical mark writing conditions. Static testing of a first-surface disk demonstrates that a 8% difference in reflectivity exists between the amorphous marks formed in a finally-crystallized, high reflectivity state and partially crystallized, low reflectivity state. This difference in final state reflectivity is a source of noise for rewritable phase-change optical disks.
Keywords
optical disc storage; optical noise; reflectivity; solid-state phase transformations; amorphous mark formation; final-state reflectivity; finally-crystallized high reflectivity state; first-surface disk; identical mark writing conditions; initial state; low reflectivity state; partial crystallization; phase-change disk; reflectivity; rewritable phase-change optical disk noise source; static testing; Amorphous materials; Crystallization; Laser beams; Optical noise; Optical sensors; Optical surface waves; Petroleum; Reflectivity; Testing; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Data Storage, 2000. Conference Digest
Conference_Location
Whisler, BC, Canada
Print_ISBN
0-7803-5950-X
Type
conf
DOI
10.1109/ODS.2000.848001
Filename
848001
Link To Document