A BiCMOS voltage controlled oscillator and frequency doubler for K-band applications

Author

Copani, Tino ; Bakkaloglu, Bertan ; Kiaei, Sayfe

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ

fYear

2008

fDate

June 17 2008-April 17 2008

Firstpage

537

Lastpage

540

Abstract

A mm-wave voltage controlled oscillator and frequency doubler for 18-GHz applications are presented. A 9-GHz voltage controlled oscillator is implemented by using a double LC-tank resonator to improve loaded Q at high frequencies. Inductive coupling is exploited to design an 18-GHz frequency doubler, which improves spurious rejection and immunity to supply noise. The prototype is implemented in a SiGe BiCMOS process and performs a FOM of -183 dBc/Hz at 19 GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC frequency convertors; MMIC oscillators; frequency multipliers; resonators; voltage-controlled oscillators; BiCMOS voltage controlled oscillator; K-band applications; SiGe; double LC-tank resonator; frequency 18 GHz; frequency 19 GHz; frequency 9 GHz; frequency doubler; inductive coupling; mm-wave voltage controlled oscillator; BiCMOS integrated circuits; Frequency; Inductors; K-band; Phase noise; Q factor; Switches; Tuning; Varactors; Voltage-controlled oscillators; Voltage controlled oscillator; frequency doubler; phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE

Conference_Location

Atlanta, GA

ISSN

1529-2517

Print_ISBN

978-1-4244-1808-4

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2008.4561494

Filename

4561494