Title :
A BiCMOS voltage controlled oscillator and frequency doubler for K-band applications
Author :
Copani, Tino ; Bakkaloglu, Bertan ; Kiaei, Sayfe
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fDate :
June 17 2008-April 17 2008
Abstract :
A mm-wave voltage controlled oscillator and frequency doubler for 18-GHz applications are presented. A 9-GHz voltage controlled oscillator is implemented by using a double LC-tank resonator to improve loaded Q at high frequencies. Inductive coupling is exploited to design an 18-GHz frequency doubler, which improves spurious rejection and immunity to supply noise. The prototype is implemented in a SiGe BiCMOS process and performs a FOM of -183 dBc/Hz at 19 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC frequency convertors; MMIC oscillators; frequency multipliers; resonators; voltage-controlled oscillators; BiCMOS voltage controlled oscillator; K-band applications; SiGe; double LC-tank resonator; frequency 18 GHz; frequency 19 GHz; frequency 9 GHz; frequency doubler; inductive coupling; mm-wave voltage controlled oscillator; BiCMOS integrated circuits; Frequency; Inductors; K-band; Phase noise; Q factor; Switches; Tuning; Varactors; Voltage-controlled oscillators; Voltage controlled oscillator; frequency doubler; phase noise;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561494
