Title :
Different linearizing techniques to improve electromagnetic compatibility in SiGe LNA
Author :
Tirado-Mendez, J.A. ; Jardon-Aguilar, H. ; Iturbide-Sanchez, F.
Author_Institution :
Telecommun. Sect., Centre of Res. & Adv. Studies-IPN, Mexico
Abstract :
In this work three different structures are proposed to improve the linearity of SiGe amplifiers. The first structure, AFCE has the possibility of obtaining high linearity and wide bandwidth with low-level noise figure, without degrading the power gain. The second configuration called CERCC in a very high linearization is obtained but in a narrower band than the Active feedback configuration. The third structure is an alternative of the previous, but using only one resonant circuit in the collector and an inductor in the emitter.
Keywords :
Ge-Si alloys; electromagnetic compatibility; linearisation techniques; power amplifiers; AFCE configuration; CERCC; LNA; SiGe; active feedback common-emitter; electromagnetic compatibility; inductor; linearizing technique; low-level noise figure; resonant circuit; Bandwidth; Degradation; Electromagnetic compatibility; Feedback; Germanium silicon alloys; Inductors; Linearity; Noise figure; RLC circuits; Silicon germanium;
Conference_Titel :
Electromagnetic Compatibility and Electromagnetic Ecology, 2005. IEEE 6th International Symposium on
Print_ISBN :
0-7803-9374-0
DOI :
10.1109/EMCECO.2005.1513090