Title :
SEE and TID Response of Spansion 512Mb NOR Flash Memory
Author :
Irom, Farokh ; Nguyen, Duc N.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Single event effect (SEE) and total ionizing dose (TID) response for Spansion 512Mb NOR flash memory are reported. Three SEE phenomena were investigated: single event upsets (SEUs), single event functional interrupts (SEFIs), and high current events. TID measurements were performed in two modes: Erase/Program/Read and Read Only.
Keywords :
NOR circuits; flash memories; SEE; SEFI; SEU; Spansion 512Mb NOR flash memory; TID measurement; high current event; single event effect; single event functional interrupt; single event upset; storage capacity 512 Mbit; total ionizing dose; Charge pumps; Current measurement; Flash memory; Performance evaluation; Radiation effects; Single event upset; Temperature measurement;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2011 IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4577-1281-4
DOI :
10.1109/REDW.2010.6062520
