• DocumentCode
    2083490
  • Title

    SEE and TID Response of Spansion 512Mb NOR Flash Memory

  • Author

    Irom, Farokh ; Nguyen, Duc N.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2011
  • fDate
    25-29 July 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Single event effect (SEE) and total ionizing dose (TID) response for Spansion 512Mb NOR flash memory are reported. Three SEE phenomena were investigated: single event upsets (SEUs), single event functional interrupts (SEFIs), and high current events. TID measurements were performed in two modes: Erase/Program/Read and Read Only.
  • Keywords
    NOR circuits; flash memories; SEE; SEFI; SEU; Spansion 512Mb NOR flash memory; TID measurement; high current event; single event effect; single event functional interrupt; single event upset; storage capacity 512 Mbit; total ionizing dose; Charge pumps; Current measurement; Flash memory; Performance evaluation; Radiation effects; Single event upset; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2011 IEEE
  • Conference_Location
    Las Vegas, NV
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4577-1281-4
  • Type

    conf

  • DOI
    10.1109/REDW.2010.6062520
  • Filename
    6062520
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2083490