DocumentCode
2083510
Title
SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation
Author
Grürmann, Kai ; Walter, Dietmar ; Herrmann, Martin ; Gliem, Fritz ; Kettunen, Heikki ; Ferlet-Cavrois, Véronique
Author_Institution
Inst. of Comput. & Network Eng., Tech. Univ. Braunschweig, Braunschweig, Germany
fYear
2011
fDate
25-29 July 2011
Firstpage
1
Lastpage
5
Abstract
The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.
Keywords
NAND circuits; flash memories; radiation effects; MBU angular dependence; Micron 8-Gbit SLC NAND-flash memories; SEU angular dependence; Samsung 8-Gbit SLC NAND-flash memories; heavy-ion irradiation; omnidirectional sensitivity; storage capacity 8 Gbit; Annealing; Argon; Azimuth; Ions; Iron; Radiation effects; Sensitivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2011 IEEE
Conference_Location
Las Vegas, NV
ISSN
2154-0519
Print_ISBN
978-1-4577-1281-4
Type
conf
DOI
10.1109/REDW.2010.6062521
Filename
6062521
Link To Document