Title :
SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation
Author :
Grürmann, Kai ; Walter, Dietmar ; Herrmann, Martin ; Gliem, Fritz ; Kettunen, Heikki ; Ferlet-Cavrois, Véronique
Author_Institution :
Inst. of Comput. & Network Eng., Tech. Univ. Braunschweig, Braunschweig, Germany
Abstract :
The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.
Keywords :
NAND circuits; flash memories; radiation effects; MBU angular dependence; Micron 8-Gbit SLC NAND-flash memories; SEU angular dependence; Samsung 8-Gbit SLC NAND-flash memories; heavy-ion irradiation; omnidirectional sensitivity; storage capacity 8 Gbit; Annealing; Argon; Azimuth; Ions; Iron; Radiation effects; Sensitivity;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2011 IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4577-1281-4
DOI :
10.1109/REDW.2010.6062521
