DocumentCode :
2083566
Title :
SEEs Induced by High-Energy Protons and Neutrons in SDRAM
Author :
Quinn, Heather ; Graham, Paul ; Fairbanks, Tom
Author_Institution :
Int., Space, & Response Div., Los Alamos Nat. Lab., Los Alamos, NM, USA
fYear :
2011
fDate :
25-29 July 2011
Firstpage :
1
Lastpage :
5
Abstract :
In this paper, we will present results from testing commercially-available synchronous dynamic random access memory (SDRAM) in high-energy protons and neutrons. Broad spectrum neutron tests were conducted at Los Alamos National Laboratory´s Los Alamos Neutron Science Center (LANSCE) Irradiation of Chips and Electronics (ICE) House in October 2010. Mono-energetic proton tests were conducted at the Massachusetts General Hospital Burr Center in May 2011.
Keywords :
DRAM chips; SDRAM; broad spectrum neutron test; high-energy proton; mono-energetic proton test; synchronous dynamic random access memory; Arrays; Computer crashes; Error correction codes; Neutrons; Protons; SDRAM; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2011 IEEE
Conference_Location :
Las Vegas, NV
ISSN :
2154-0519
Print_ISBN :
978-1-4577-1281-4
Type :
conf
DOI :
10.1109/REDW.2010.6062524
Filename :
6062524
Link To Document :
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