Effects of forward body biasing on the high frequency noise in deep submicron NMOSFETs

In this paper, the impact of forward body biasing on the high frequency noise in deep sub-micrometer NMOSFETs is presented. Experimental results show that high frequency noise is increased with the body bias V_b, and have a positive dependence on the substrate bias. Possible mechanism behind the increase in RF noise of MOSFET under the forward body bias is studied. The increase of NF_min and R_n with the increase in V_b may appear as a great concern for the application of forward body bias scheme in the low noise circuit design.