DocumentCode :
2083649
Title :
Recent Power MOSFET Test Results
Author :
Scheick, Leif Z. ; Gauthier, Michael ; Gauthier, Brian ; Triggs, Brian
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear :
2011
fDate :
25-29 July 2011
Firstpage :
1
Lastpage :
6
Abstract :
The results of recent Single Event Effect (SEE) testing of newly available power MOSFETS are presented.
Keywords :
power HEMT; radiation hardening; power MOSFET; radiation hardening; single event effect testing; Logic gates; Power MOSFET; Radiation effects; Testing; Voltage measurement; Xenon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2011 IEEE
Conference_Location :
Las Vegas, NV
ISSN :
2154-0519
Print_ISBN :
978-1-4577-1281-4
Type :
conf
DOI :
10.1109/REDW.2010.6062527
Filename :
6062527
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2083649
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