Title :
A low spurious 400M–6GHz SiGe-MMIC Direct Conversion Transceiver using 2ƒLO LO switching configuration for cognitive radio
Author :
Tsutsumi, Koji ; Onoma, Fumiki ; Koide, Jun ; Uesugi, Mikio ; Suematsu, Noriharu ; Harada, Hiroshi
Author_Institution :
Mitsubishi Electr. Corp., Kamakura
fDate :
June 17 2008-April 17 2008
Abstract :
A low spurious SiGe-MMIC direct conversion transceiver using 2fLO LO switching configuration for cognitive radio is described. In the proposed configuration, LO signals for Tx and Rx blocks are generated by frequency divider behind switching circuits. By applying this configuration to the transceiver, the offset frequency of maximum Tx spurious in FDD mode is doubled compared to the conventional configuration. Also, theoretical analysis shows that the proposed configuration can lower LO signal spurious level by 12 dB. Through these effects, receiver sensitivity degradation by Tx signal can be avoided and required characteristics of Tx BPF is relaxed. The direct conversion transceiver MMIC using 2fLO LO switching configuration is fabricated in 0.18 mum SiGe-BiCMOS process. Measured results show a high modulation accuracy over 400 M-6 GHz, and low Tx spurious characteristics.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; UHF integrated circuits; UHF oscillators; cognitive radio; frequency dividers; switching circuits; transceivers; BiCMOS process; LO signals; LO switching configuration; MMIC direct conversion transceiver; SiGe; cognitive radio; frequency 400 MHz to 6 GHz; size 0.18 mum; switching circuits; Band pass filters; Cognitive radio; Degradation; Frequency conversion; MMICs; Radiofrequency integrated circuits; Signal analysis; Signal generators; Switching circuits; Transceivers; Cognitive Radio; Direct conversion; FDD; MMICs; TDD; Tx spurious; multi-band; multi-mode;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2008. RFIC 2008. IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1808-4
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2008.4561505